Current crowding mediated large contact noise in graphene field-effect transistors

The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding.

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Auteurs principaux:	Paritosh Karnatak, T. Phanindra Sai, Srijit Goswami, Subhamoy Ghatak, Sanjeev Kaushal, Arindam Ghosh
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2016
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/95d32f108b3849d1910209b6e411b939
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id	oai:doaj.org-article:95d32f108b3849d1910209b6e411b939
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spelling	oai:doaj.org-article:95d32f108b3849d1910209b6e411b9392021-12-02T15:35:46ZCurrent crowding mediated large contact noise in graphene field-effect transistors10.1038/ncomms137032041-1723https://doaj.org/article/95d32f108b3849d1910209b6e411b9392016-12-01T00:00:00Zhttps://doi.org/10.1038/ncomms13703https://doaj.org/toc/2041-1723The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding.Paritosh KarnatakT. Phanindra SaiSrijit GoswamiSubhamoy GhatakSanjeev KaushalArindam GhoshNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Paritosh Karnatak T. Phanindra Sai Srijit Goswami Subhamoy Ghatak Sanjeev Kaushal Arindam Ghosh Current crowding mediated large contact noise in graphene field-effect transistors
description	The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding.
format	article
author	Paritosh Karnatak T. Phanindra Sai Srijit Goswami Subhamoy Ghatak Sanjeev Kaushal Arindam Ghosh
author_facet	Paritosh Karnatak T. Phanindra Sai Srijit Goswami Subhamoy Ghatak Sanjeev Kaushal Arindam Ghosh
author_sort	Paritosh Karnatak
title	Current crowding mediated large contact noise in graphene field-effect transistors
title_short	Current crowding mediated large contact noise in graphene field-effect transistors
title_full	Current crowding mediated large contact noise in graphene field-effect transistors
title_fullStr	Current crowding mediated large contact noise in graphene field-effect transistors
title_full_unstemmed	Current crowding mediated large contact noise in graphene field-effect transistors
title_sort	current crowding mediated large contact noise in graphene field-effect transistors
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/95d32f108b3849d1910209b6e411b939
work_keys_str_mv	AT paritoshkarnatak currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors AT tphanindrasai currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors AT srijitgoswami currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors AT subhamoyghatak currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors AT sanjeevkaushal currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors AT arindamghosh currentcrowdingmediatedlargecontactnoiseingraphenefieldeffecttransistors
_version_	1718386489970130944

Current crowding mediated large contact noise in graphene field-effect transistors

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