Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

Abstract In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcog...

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Autores principales:	Fábio Ferreira, Vladimir V. Enaldiev, Vladimir I. Fal’ko, Samuel J. Magorrian
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/95ed22c8fc954ba38e1e87a671e68c28
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spelling	oai:doaj.org-article:95ed22c8fc954ba38e1e87a671e68c282021-12-02T18:18:51ZWeak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors10.1038/s41598-021-92710-12045-2322https://doaj.org/article/95ed22c8fc954ba38e1e87a671e68c282021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-92710-1https://doaj.org/toc/2045-2322Abstract In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)—in particular, $$\hbox {WSe}_2$$ WSe 2 —for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.Fábio FerreiraVladimir V. EnaldievVladimir I. Fal’koSamuel J. MagorrianNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Fábio Ferreira Vladimir V. Enaldiev Vladimir I. Fal’ko Samuel J. Magorrian Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
description	Abstract In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)—in particular, $$\hbox {WSe}_2$$ WSe 2 —for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
format	article
author	Fábio Ferreira Vladimir V. Enaldiev Vladimir I. Fal’ko Samuel J. Magorrian
author_facet	Fábio Ferreira Vladimir V. Enaldiev Vladimir I. Fal’ko Samuel J. Magorrian
author_sort	Fábio Ferreira
title	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
title_short	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
title_full	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
title_fullStr	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
title_full_unstemmed	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
title_sort	weak ferroelectric charge transfer in layer-asymmetric bilayers of 2d semiconductors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/95ed22c8fc954ba38e1e87a671e68c28
work_keys_str_mv	AT fabioferreira weakferroelectricchargetransferinlayerasymmetricbilayersof2dsemiconductors AT vladimirvenaldiev weakferroelectricchargetransferinlayerasymmetricbilayersof2dsemiconductors AT vladimirifalko weakferroelectricchargetransferinlayerasymmetricbilayersof2dsemiconductors AT samueljmagorrian weakferroelectricchargetransferinlayerasymmetricbilayersof2dsemiconductors
_version_	1718378170156056576

Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

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