Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

Abstract In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcog...

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Autores principales: Fábio Ferreira, Vladimir V. Enaldiev, Vladimir I. Fal’ko, Samuel J. Magorrian
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/95ed22c8fc954ba38e1e87a671e68c28
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