Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers

The front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single channel is built of two different parallel processing paths: a fast path wit...

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Autores principales:	T. Sanchez-Rodriguez, J. A. Gomez-Galan, F. Marquez, M. Sanchez-Raya, J. Hinojo, F. Munoz
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Low power sensor interface circuits analog front-end electronics semiconductor detectors complex shaper charge sensitive amplifier Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/95f586865ce140fe8e40408535617286
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spelling	oai:doaj.org-article:95f586865ce140fe8e404085356172862021-11-18T00:10:47ZAnalog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers2169-353610.1109/ACCESS.2021.3124644https://doaj.org/article/95f586865ce140fe8e404085356172862021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9597544/https://doaj.org/toc/2169-3536The front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single channel is built of two different parallel processing paths: a fast path with a peaking time of 30 ns to obtain the time of arrival for each particle impinging the detector; and a slow path with a peaking time of 400 ns dedicated for low noise amplitude measurements, which is formed by a pole-zero cancellation circuit and a 4th order complex shaper based on a bridged-T architecture. The tunability of the system is accomplished by the discharge time constant of the CSA in order to accommodate various event rates. The readout system has been implemented in a 180 nm CMOS technology with the size of 525 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> x <inline-formula> <tex-math notation="LaTeX">$290~\mu \text{m}$ </tex-math></inline-formula>. The building blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving accurate energy measurement with good resolution. The high impedance nodes of QFG transistors require a detailed study of sensitivity to single-effect transients (SET). After carrying out this study, this paper proposes a method to select the value of the QFG capacitors, minimizing the area occupancy while maintaining robustness to radiation. The nonlinearity of the CSA-slow-shaper has been found to be less than 1% over a 10–70 fC input charge. The power dissipation of the readout channel is 4.1 mW with a supply voltage of 1.8 V.T. Sanchez-RodriguezJ. A. Gomez-GalanF. MarquezM. Sanchez-RayaJ. HinojoF. MunozIEEEarticleLow power sensor interface circuitsanalog front-end electronicssemiconductor detectorscomplex shapercharge sensitive amplifierElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 148421-148432 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Low power sensor interface circuits analog front-end electronics semiconductor detectors complex shaper charge sensitive amplifier Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Low power sensor interface circuits analog front-end electronics semiconductor detectors complex shaper charge sensitive amplifier Electrical engineering. Electronics. Nuclear engineering TK1-9971 T. Sanchez-Rodriguez J. A. Gomez-Galan F. Marquez M. Sanchez-Raya J. Hinojo F. Munoz Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
description	The front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single channel is built of two different parallel processing paths: a fast path with a peaking time of 30 ns to obtain the time of arrival for each particle impinging the detector; and a slow path with a peaking time of 400 ns dedicated for low noise amplitude measurements, which is formed by a pole-zero cancellation circuit and a 4th order complex shaper based on a bridged-T architecture. The tunability of the system is accomplished by the discharge time constant of the CSA in order to accommodate various event rates. The readout system has been implemented in a 180 nm CMOS technology with the size of 525 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> x <inline-formula> <tex-math notation="LaTeX">$290~\mu \text{m}$ </tex-math></inline-formula>. The building blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving accurate energy measurement with good resolution. The high impedance nodes of QFG transistors require a detailed study of sensitivity to single-effect transients (SET). After carrying out this study, this paper proposes a method to select the value of the QFG capacitors, minimizing the area occupancy while maintaining robustness to radiation. The nonlinearity of the CSA-slow-shaper has been found to be less than 1% over a 10–70 fC input charge. The power dissipation of the readout channel is 4.1 mW with a supply voltage of 1.8 V.
format	article
author	T. Sanchez-Rodriguez J. A. Gomez-Galan F. Marquez M. Sanchez-Raya J. Hinojo F. Munoz
author_facet	T. Sanchez-Rodriguez J. A. Gomez-Galan F. Marquez M. Sanchez-Raya J. Hinojo F. Munoz
author_sort	T. Sanchez-Rodriguez
title	Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
title_short	Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
title_full	Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
title_fullStr	Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
title_full_unstemmed	Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
title_sort	analog cmos readout channel for time and amplitude measurements with radiation sensitivity analysis for gain-boosting amplifiers
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/95f586865ce140fe8e40408535617286
work_keys_str_mv	AT tsanchezrodriguez analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers AT jagomezgalan analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers AT fmarquez analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers AT msanchezraya analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers AT jhinojo analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers AT fmunoz analogcmosreadoutchannelfortimeandamplitudemeasurementswithradiationsensitivityanalysisforgainboostingamplifiers
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Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers

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