Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence

The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the...

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Autor principal:	Hadji, Piotr
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/96664ea6ef1146fb802fcdfb6eda9fcc
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spelling	oai:doaj.org-article:96664ea6ef1146fb802fcdfb6eda9fcc2021-11-21T12:10:59ZOptical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence2537-63651810-648Xhttps://doaj.org/article/96664ea6ef1146fb802fcdfb6eda9fcc2005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3302https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the well pronounced Autler–Townes effect occurs at the exciton resonance. The position of the absorption peaks is determined by the amplitude and frequency of the pump pulse. Hadji, PiotrD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 399-407 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Hadji, Piotr Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
description	The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the well pronounced Autler–Townes effect occurs at the exciton resonance. The position of the absorption peaks is determined by the amplitude and frequency of the pump pulse.
format	article
author	Hadji, Piotr
author_facet	Hadji, Piotr
author_sort	Hadji, Piotr
title	Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
title_short	Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
title_full	Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
title_fullStr	Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
title_full_unstemmed	Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
title_sort	optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/96664ea6ef1146fb802fcdfb6eda9fcc
work_keys_str_mv	AT hadjipiotr opticalpropertiesofsemicomductorinexcitonrangeofspectruminpresenceofstrongpumppulseinmbandofluminescence
_version_	1718419138904326144

Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence

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