Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence
The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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oai:doaj.org-article:96664ea6ef1146fb802fcdfb6eda9fcc2021-11-21T12:10:59ZOptical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence2537-63651810-648Xhttps://doaj.org/article/96664ea6ef1146fb802fcdfb6eda9fcc2005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3302https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the well pronounced Autler–Townes effect occurs at the exciton resonance. The position of the absorption peaks is determined by the amplitude and frequency of the pump pulse. Hadji, PiotrD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 399-407 (2005) |
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DOAJ |
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Physics QC1-999 Electronics TK7800-8360 |
| spellingShingle |
Physics QC1-999 Electronics TK7800-8360 Hadji, Piotr Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| description |
The behavior of the semiconductor dielectric susceptibility in the exciton range of
spectrum due to the interaction with photons of a weak test pulse under the stationary action
of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown
that the well pronounced Autler–Townes effect occurs at the exciton resonance. The position
of the absorption peaks is determined by the amplitude and frequency of the pump pulse.
|
| format |
article |
| author |
Hadji, Piotr |
| author_facet |
Hadji, Piotr |
| author_sort |
Hadji, Piotr |
| title |
Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| title_short |
Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| title_full |
Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| title_fullStr |
Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| title_full_unstemmed |
Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| title_sort |
optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in m–band of luminescence |
| publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| publishDate |
2005 |
| url |
https://doaj.org/article/96664ea6ef1146fb802fcdfb6eda9fcc |
| work_keys_str_mv |
AT hadjipiotr opticalpropertiesofsemicomductorinexcitonrangeofspectruminpresenceofstrongpumppulseinmbandofluminescence |
| _version_ |
1718419138904326144 |