Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity

The results of a study of the effect of the anisotropic elastic deformation up to 2% relative elongation on the change in the Fermi surface cross section of Sn-doped Bi wires in a glass envelope with the (1011) crystallographic orientation along the axis of elongation have been described. Changes in...

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Autores principales:	Nikolaeva, Albina, Konopko, Leonid, Kobileanscaia (Ţurcan), Ana, Burduja, Denis
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2015
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/9699f33496f04fe0aab99f5ba639f6f0
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id	oai:doaj.org-article:9699f33496f04fe0aab99f5ba639f6f0
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spelling	oai:doaj.org-article:9699f33496f04fe0aab99f5ba639f6f02021-11-21T11:58:26ZEffect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity538.92537-63651810-648Xhttps://doaj.org/article/9699f33496f04fe0aab99f5ba639f6f02015-11-01T00:00:00Zhttps://mjps.nanotech.md/archive/2015/article/43388https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The results of a study of the effect of the anisotropic elastic deformation up to 2% relative elongation on the change in the Fermi surface cross section of Sn-doped Bi wires in a glass envelope with the (1011) crystallographic orientation along the axis of elongation have been described. Changes in the Fermi surface cross section are recorded using Shubnikov-de Haas (ShdH) oscillations. It has been shown that the elastic deformation of Bi0.07at%Sn wires is accompanied by an electronic topological transition at which the carriers of two hole ellipsoids L2,3 that are equivalent with respect to the axis of elongation and exhibit high charge carrier mobilities flow into hole ellipsoid L1 with low carrier mobilities up to a topological transition at which the conductivity occurs only through the holes of hole ellipsoids L1 and T located at the L and T points of the Brillouin zone. The temperature and deformation dependences of resistance R and thermoelectric power α have been studied. It has been found that the size effect in the Bi0.07at%Sn wires is evident from the formation of a maximum in R(T) and the sign inversion in α(T) that linearly depend on the reciprocal of diameter 1/d. It has been shown that the deformation dependence of resistance and thermoelectric power represent the electronic topological transition that occurs during tensile deformation. Nikolaeva, AlbinaKonopko, LeonidKobileanscaia (Ţurcan), AnaBurduja, DenisD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 14, Iss 1-2, Pp 35-43 (2015)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Nikolaeva, Albina Konopko, Leonid Kobileanscaia (Ţurcan), Ana Burduja, Denis Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
description	The results of a study of the effect of the anisotropic elastic deformation up to 2% relative elongation on the change in the Fermi surface cross section of Sn-doped Bi wires in a glass envelope with the (1011) crystallographic orientation along the axis of elongation have been described. Changes in the Fermi surface cross section are recorded using Shubnikov-de Haas (ShdH) oscillations. It has been shown that the elastic deformation of Bi0.07at%Sn wires is accompanied by an electronic topological transition at which the carriers of two hole ellipsoids L2,3 that are equivalent with respect to the axis of elongation and exhibit high charge carrier mobilities flow into hole ellipsoid L1 with low carrier mobilities up to a topological transition at which the conductivity occurs only through the holes of hole ellipsoids L1 and T located at the L and T points of the Brillouin zone. The temperature and deformation dependences of resistance R and thermoelectric power α have been studied. It has been found that the size effect in the Bi0.07at%Sn wires is evident from the formation of a maximum in R(T) and the sign inversion in α(T) that linearly depend on the reciprocal of diameter 1/d. It has been shown that the deformation dependence of resistance and thermoelectric power represent the electronic topological transition that occurs during tensile deformation.
format	article
author	Nikolaeva, Albina Konopko, Leonid Kobileanscaia (Ţurcan), Ana Burduja, Denis
author_facet	Nikolaeva, Albina Konopko, Leonid Kobileanscaia (Ţurcan), Ana Burduja, Denis
author_sort	Nikolaeva, Albina
title	Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
title_short	Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
title_full	Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
title_fullStr	Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
title_full_unstemmed	Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
title_sort	effect of anisotropic elastic deformation on the fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2015
url	https://doaj.org/article/9699f33496f04fe0aab99f5ba639f6f0
work_keys_str_mv	AT nikolaevaalbina effectofanisotropicelasticdeformationonthefermisurfacecrosssectionofdopedbismuthwiresexhibitingptypeconductivity AT konopkoleonid effectofanisotropicelasticdeformationonthefermisurfacecrosssectionofdopedbismuthwiresexhibitingptypeconductivity AT kobileanscaiaturcanana effectofanisotropicelasticdeformationonthefermisurfacecrosssectionofdopedbismuthwiresexhibitingptypeconductivity AT burdujadenis effectofanisotropicelasticdeformationonthefermisurfacecrosssectionofdopedbismuthwiresexhibitingptypeconductivity
_version_	1718419320294342656

Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity

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