Effect of anisotropic elastic deformation on the Fermi surface cross section of doped bismuth wires exhibiting p-type conductivity
The results of a study of the effect of the anisotropic elastic deformation up to 2% relative elongation on the change in the Fermi surface cross section of Sn-doped Bi wires in a glass envelope with the (1011) crystallographic orientation along the axis of elongation have been described. Changes in...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2015
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9699f33496f04fe0aab99f5ba639f6f0 |
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