Spontaneous current constriction in threshold switching devices

Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.

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Autores principales:	Jonathan M. Goodwill, Georg Ramer, Dasheng Li, Brian D. Hoskins, Georges Pavlidis, Jabez J. McClelland, Andrea Centrone, James A. Bain, Marek Skowronski
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/97f7a07a55ec43febc4d159255dbad9d
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spelling	oai:doaj.org-article:97f7a07a55ec43febc4d159255dbad9d2021-12-02T15:36:07ZSpontaneous current constriction in threshold switching devices10.1038/s41467-019-09679-92041-1723https://doaj.org/article/97f7a07a55ec43febc4d159255dbad9d2019-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09679-9https://doaj.org/toc/2041-1723Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.Jonathan M. GoodwillGeorg RamerDasheng LiBrian D. HoskinsGeorges PavlidisJabez J. McClellandAndrea CentroneJames A. BainMarek SkowronskiNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski Spontaneous current constriction in threshold switching devices
description	Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.
format	article
author	Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski
author_facet	Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski
author_sort	Jonathan M. Goodwill
title	Spontaneous current constriction in threshold switching devices
title_short	Spontaneous current constriction in threshold switching devices
title_full	Spontaneous current constriction in threshold switching devices
title_fullStr	Spontaneous current constriction in threshold switching devices
title_full_unstemmed	Spontaneous current constriction in threshold switching devices
title_sort	spontaneous current constriction in threshold switching devices
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/97f7a07a55ec43febc4d159255dbad9d
work_keys_str_mv	AT jonathanmgoodwill spontaneouscurrentconstrictioninthresholdswitchingdevices AT georgramer spontaneouscurrentconstrictioninthresholdswitchingdevices AT dashengli spontaneouscurrentconstrictioninthresholdswitchingdevices AT briandhoskins spontaneouscurrentconstrictioninthresholdswitchingdevices AT georgespavlidis spontaneouscurrentconstrictioninthresholdswitchingdevices AT jabezjmcclelland spontaneouscurrentconstrictioninthresholdswitchingdevices AT andreacentrone spontaneouscurrentconstrictioninthresholdswitchingdevices AT jamesabain spontaneouscurrentconstrictioninthresholdswitchingdevices AT marekskowronski spontaneouscurrentconstrictioninthresholdswitchingdevices
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Spontaneous current constriction in threshold switching devices

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