Spontaneous current constriction in threshold switching devices
Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/97f7a07a55ec43febc4d159255dbad9d |
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