Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials

Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are...

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Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2013
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/982ecd3800634a43b019099a68f84ae1
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id	oai:doaj.org-article:982ecd3800634a43b019099a68f84ae1
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spelling	oai:doaj.org-article:982ecd3800634a43b019099a68f84ae12021-11-21T11:59:58ZNumerical modeling of detection in contacts of a bismuth-antimony alloy with different materials 2537-63651810-648Xhttps://doaj.org/article/982ecd3800634a43b019099a68f84ae12013-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2013/article/29775https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 12, Iss 3-4, Pp 263-267 (2013)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
description	Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
title_short	Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
title_full	Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
title_fullStr	Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
title_full_unstemmed	Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
title_sort	numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2013
url	https://doaj.org/article/982ecd3800634a43b019099a68f84ae1
work_keys_str_mv	AT cherneriacov numericalmodelingofdetectionincontactsofabismuthantimonyalloywithdifferentmaterials
_version_	1718419320483086336

Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials

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