Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W=8 \mu$ </tex-math></inli...

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Autores principales:	Yuan Liu, Shu-Ting Cai, Chao-Yang Han, Ya-Yi Chen, Li Wang, Xiao-Ming Xiong, Rongsheng Chen
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Polycrystalline silicon thin film transistor low frequency noise channel length Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd
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spelling	oai:doaj.org-article:983e27142f2446fe9dd6adfeeb6d8bdd2021-11-19T00:01:00ZScaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors2168-673410.1109/JEDS.2018.2890737https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8600311/https://doaj.org/toc/2168-6734Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W=8 \mu$ </tex-math></inline-formula> m) and different channel lengths (<inline-formula> <tex-math notation="LaTeX">$L=2, 4, 8, 12, ~\text{and}~ 20 \mu$ </tex-math></inline-formula>m). First, short channel effects on threshold voltage, field effect mobility, and sub-threshold swing are examined, while the presence of contact may induce to the degradation of field effect mobility in the short channel devices. Subsequently, the drain current noise power spectral densities are measured at varied effective gate voltages and drain currents. The slopes of normalized noise against effective gate voltage are varied from −1.1 to −2 with decreasing channel length, which indicates that poly-Si TFTs varied from bulk dominated devices to interface dominated devices. Based on <inline-formula> <tex-math notation="LaTeX">$\Delta N-\Delta \mu$ </tex-math></inline-formula> model, the flat-band voltage noise spectral density and coulomb scattering coefficient are extracted. Therefore, measured normalized noises are simulated by considering of contact resistance. Finally, short channel effects on some noise parameters (such as Hooge’s parameter, etc.) are studied and discussed.Yuan LiuShu-Ting CaiChao-Yang HanYa-Yi ChenLi WangXiao-Ming XiongRongsheng ChenIEEEarticlePolycrystalline siliconthin film transistorlow frequency noisechannel lengthElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 203-209 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Polycrystalline silicon thin film transistor low frequency noise channel length Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Polycrystalline silicon thin film transistor low frequency noise channel length Electrical engineering. Electronics. Nuclear engineering TK1-9971 Yuan Liu Shu-Ting Cai Chao-Yang Han Ya-Yi Chen Li Wang Xiao-Ming Xiong Rongsheng Chen Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
description	Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W=8 \mu$ </tex-math></inline-formula> m) and different channel lengths (<inline-formula> <tex-math notation="LaTeX">$L=2, 4, 8, 12, ~\text{and}~ 20 \mu$ </tex-math></inline-formula>m). First, short channel effects on threshold voltage, field effect mobility, and sub-threshold swing are examined, while the presence of contact may induce to the degradation of field effect mobility in the short channel devices. Subsequently, the drain current noise power spectral densities are measured at varied effective gate voltages and drain currents. The slopes of normalized noise against effective gate voltage are varied from −1.1 to −2 with decreasing channel length, which indicates that poly-Si TFTs varied from bulk dominated devices to interface dominated devices. Based on <inline-formula> <tex-math notation="LaTeX">$\Delta N-\Delta \mu$ </tex-math></inline-formula> model, the flat-band voltage noise spectral density and coulomb scattering coefficient are extracted. Therefore, measured normalized noises are simulated by considering of contact resistance. Finally, short channel effects on some noise parameters (such as Hooge’s parameter, etc.) are studied and discussed.
format	article
author	Yuan Liu Shu-Ting Cai Chao-Yang Han Ya-Yi Chen Li Wang Xiao-Ming Xiong Rongsheng Chen
author_facet	Yuan Liu Shu-Ting Cai Chao-Yang Han Ya-Yi Chen Li Wang Xiao-Ming Xiong Rongsheng Chen
author_sort	Yuan Liu
title	Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
title_short	Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
title_full	Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
title_fullStr	Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
title_full_unstemmed	Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
title_sort	scaling down effect on low frequency noise in polycrystalline silicon thin-film transistors
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd
work_keys_str_mv	AT yuanliu scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT shutingcai scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT chaoyanghan scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT yayichen scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT liwang scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT xiaomingxiong scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors AT rongshengchen scalingdowneffectonlowfrequencynoiseinpolycrystallinesiliconthinfilmtransistors
_version_	1718420681096429568

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

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