Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W=8 \mu$ </tex-math></inli...

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Bibliographic Details
Main Authors: Yuan Liu, Shu-Ting Cai, Chao-Yang Han, Ya-Yi Chen, Li Wang, Xiao-Ming Xiong, Rongsheng Chen
Format: article
Language:EN
Published: IEEE 2019
Subjects:
Polycrystalline silicon
thin film transistor
low frequency noise
channel length
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd
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https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd

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