Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W=8 \mu$ </tex-math></inli...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/983e27142f2446fe9dd6adfeeb6d8bdd |
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