How dopants limit the ultrahigh thermal conductivity of boron arsenide: a first principles study
Abstract The promise enabled by boron arsenide’s (BAs) high thermal conductivity (κ) in power electronics cannot be assessed without taking into account the reduction incurred when doping the material. Using first principles calculations, we determine the κ reduction induced by different group IV im...
Enregistré dans:
Auteurs principaux: | Mauro Fava, Nakib Haider Protik, Chunhua Li, Navaneetha Krishnan Ravichandran, Jesús Carrete, Ambroise van Roekeghem, Georg K. H. Madsen, Natalio Mingo, David Broido |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/987984f27ecc4eb2844b7fc366b127b9 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Non-monotonic pressure dependence of the thermal conductivity of boron arsenide
par: Navaneetha K. Ravichandran, et autres
Publié: (2019) -
Thermodynamics of order and randomness in dopant distributions inferred from atomically resolved imaging
par: Lukas Vlcek, et autres
Publié: (2021) -
Predicting thermoelectric properties from chemical formula with explicitly identifying dopant effects
par: Gyoung S. Na, et autres
Publié: (2021) -
Intersystem crossing and exciton–defect coupling of spin defects in hexagonal boron nitride
par: Tyler J. Smart, et autres
Publié: (2021) -
Radiative properties of quantum emitters in boron nitride from excited state calculations and Bayesian analysis
par: Shiyuan Gao, et autres
Publié: (2021)