Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whe...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Asif Ali, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, Jongwan Jung
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
Acceso en línea:https://doaj.org/article/98a77672e7a9477eb7503f2fcf982b6e
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N<sub>2</sub> gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O<sub>2</sub> showed ~15% de-doping over 4 months. The n-type doping in pure N<sub>2</sub> exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.