Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whe...

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Autores principales:	Asif Ali, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, Jongwan Jung
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene DUV irradiation p-doping n-doping pn-junction Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/98a77672e7a9477eb7503f2fcf982b6e
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spelling	oai:doaj.org-article:98a77672e7a9477eb7503f2fcf982b6e2021-11-25T18:31:35ZDeep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction10.3390/nano111130032079-4991https://doaj.org/article/98a77672e7a9477eb7503f2fcf982b6e2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3003https://doaj.org/toc/2079-4991The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N<sub>2</sub> gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O<sub>2</sub> showed ~15% de-doping over 4 months. The n-type doping in pure N<sub>2</sub> exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.Asif AliSo-Young KimMuhammad HussainSyed Hassan Abbas JafferyGhulam DastgeerSajjad HussainBach Thi Phuong AnhJonghwa EomByoung Hun LeeJongwan JungMDPI AGarticlegrapheneDUV irradiationp-dopingn-dopingpn-junctionChemistryQD1-999ENNanomaterials, Vol 11, Iss 3003, p 3003 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	graphene DUV irradiation p-doping n-doping pn-junction Chemistry QD1-999
spellingShingle	graphene DUV irradiation p-doping n-doping pn-junction Chemistry QD1-999 Asif Ali So-Young Kim Muhammad Hussain Syed Hassan Abbas Jaffery Ghulam Dastgeer Sajjad Hussain Bach Thi Phuong Anh Jonghwa Eom Byoung Hun Lee Jongwan Jung Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
description	The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O<sub>2</sub>, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N<sub>2</sub> gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O<sub>2</sub> showed ~15% de-doping over 4 months. The n-type doping in pure N<sub>2</sub> exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.
format	article
author	Asif Ali So-Young Kim Muhammad Hussain Syed Hassan Abbas Jaffery Ghulam Dastgeer Sajjad Hussain Bach Thi Phuong Anh Jonghwa Eom Byoung Hun Lee Jongwan Jung
author_facet	Asif Ali So-Young Kim Muhammad Hussain Syed Hassan Abbas Jaffery Ghulam Dastgeer Sajjad Hussain Bach Thi Phuong Anh Jonghwa Eom Byoung Hun Lee Jongwan Jung
author_sort	Asif Ali
title	Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
title_short	Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
title_full	Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
title_fullStr	Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
title_full_unstemmed	Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
title_sort	deep-ultraviolet (duv)-induced doping in single channel graphene for pn-junction
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/98a77672e7a9477eb7503f2fcf982b6e
work_keys_str_mv	AT asifali deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT soyoungkim deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT muhammadhussain deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT syedhassanabbasjaffery deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT ghulamdastgeer deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT sajjadhussain deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT bachthiphuonganh deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT jonghwaeom deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT byounghunlee deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction AT jongwanjung deepultravioletduvinduceddopinginsinglechannelgrapheneforpnjunction
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Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

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