Ab Initio Full Cell GW+DMFT for Correlated Materials

The quantitative prediction of electronic properties in correlated materials requires simulations without empirical truncations and parameters. We present a method to achieve this goal through a new ab initio formulation of dynamical mean-field theory (DMFT). Instead of using small impurities define...

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Autores principales: Tianyu Zhu, Garnet Kin-Lic Chan
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Publicado: American Physical Society 2021
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spelling oai:doaj.org-article:98ab7f43c7e4488bb3ccc278389898862021-12-02T18:18:22ZAb Initio Full Cell GW+DMFT for Correlated Materials10.1103/PhysRevX.11.0210062160-3308https://doaj.org/article/98ab7f43c7e4488bb3ccc278389898862021-04-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.11.021006http://doi.org/10.1103/PhysRevX.11.021006https://doaj.org/toc/2160-3308The quantitative prediction of electronic properties in correlated materials requires simulations without empirical truncations and parameters. We present a method to achieve this goal through a new ab initio formulation of dynamical mean-field theory (DMFT). Instead of using small impurities defined in a low-energy subspace, which require complicated downfolded interactions which are often approximated, we describe a full cell GW+DMFT approach, where the impurities comprise all atoms in a unit cell or supercell of the crystal. Our formulation results in large impurity problems, which we treat here with efficient quantum chemistry impurity solvers that work on the real-frequency axis, combined with a one-shot G_{0}W_{0} treatment of long-range interactions. We apply our full cell approach to bulk Si, two antiferromagnetic correlated insulators NiO and α-Fe_{2}O_{3}, and the paramagnetic correlated metal SrMoO_{3}, with impurities containing up to ten atoms and 124 orbitals. We find that spectral properties, magnetic moments, and two-particle spin correlation functions are obtained in good agreement with experiment. In addition, in the metal oxide insulators, the balanced treatment of correlations involving all orbitals in the cell leads to new insights into the orbital character around the insulating gap.Tianyu ZhuGarnet Kin-Lic ChanAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 11, Iss 2, p 021006 (2021)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
spellingShingle Physics
QC1-999
Tianyu Zhu
Garnet Kin-Lic Chan
Ab Initio Full Cell GW+DMFT for Correlated Materials
description The quantitative prediction of electronic properties in correlated materials requires simulations without empirical truncations and parameters. We present a method to achieve this goal through a new ab initio formulation of dynamical mean-field theory (DMFT). Instead of using small impurities defined in a low-energy subspace, which require complicated downfolded interactions which are often approximated, we describe a full cell GW+DMFT approach, where the impurities comprise all atoms in a unit cell or supercell of the crystal. Our formulation results in large impurity problems, which we treat here with efficient quantum chemistry impurity solvers that work on the real-frequency axis, combined with a one-shot G_{0}W_{0} treatment of long-range interactions. We apply our full cell approach to bulk Si, two antiferromagnetic correlated insulators NiO and α-Fe_{2}O_{3}, and the paramagnetic correlated metal SrMoO_{3}, with impurities containing up to ten atoms and 124 orbitals. We find that spectral properties, magnetic moments, and two-particle spin correlation functions are obtained in good agreement with experiment. In addition, in the metal oxide insulators, the balanced treatment of correlations involving all orbitals in the cell leads to new insights into the orbital character around the insulating gap.
format article
author Tianyu Zhu
Garnet Kin-Lic Chan
author_facet Tianyu Zhu
Garnet Kin-Lic Chan
author_sort Tianyu Zhu
title Ab Initio Full Cell GW+DMFT for Correlated Materials
title_short Ab Initio Full Cell GW+DMFT for Correlated Materials
title_full Ab Initio Full Cell GW+DMFT for Correlated Materials
title_fullStr Ab Initio Full Cell GW+DMFT for Correlated Materials
title_full_unstemmed Ab Initio Full Cell GW+DMFT for Correlated Materials
title_sort ab initio full cell gw+dmft for correlated materials
publisher American Physical Society
publishDate 2021
url https://doaj.org/article/98ab7f43c7e4488bb3ccc27838989886
work_keys_str_mv AT tianyuzhu abinitiofullcellgwdmftforcorrelatedmaterials
AT garnetkinlicchan abinitiofullcellgwdmftforcorrelatedmaterials
_version_ 1718378289137975296