Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semico...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/98d20c23421e4e2187bf6aae11ab8584 |
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| Sumario: | A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semiconductors. |
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