Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semico...
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Auteurs principaux: | , , |
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Format: | article |
Langue: | EN |
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Nature Portfolio
2016
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Accès en ligne: | https://doaj.org/article/98d20c23421e4e2187bf6aae11ab8584 |
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Résumé: | A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semiconductors. |
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