Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
A large spin-splitting is essential for spintronic devices. Here, the authors observe a spontaneous spin-splitting energy of between 31.7 and 50 millielectronvolts in n-type indium iron arsenide at temperatures up to several tens of Kelvin, challenging the conventional theory of ferromagnetic semico...
Saved in:
Main Authors: | Le Duc Anh, Pham Nam Hai, Masaaki Tanaka |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2016
|
Subjects: | |
Online Access: | https://doaj.org/article/98d20c23421e4e2187bf6aae11ab8584 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures
by: Le Duc Anh, et al.
Published: (2021) -
Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor
by: Iriya Muneta, et al.
Published: (2016) -
Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
by: Changjiang Liu, et al.
Published: (2016) -
Band splitting with vanishing spin polarizations in noncentrosymmetric crystals
by: Kai Liu, et al.
Published: (2019) -
Resolving the spin splitting in the conduction band of monolayer MoS2
by: Kolyo Marinov, et al.
Published: (2017)