Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly dep...

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Autores principales:	Yamujin Jang, Young-Min Seo, Hyeon-Sik Jang, Keun Heo, Dongmok Whang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene field-effect transistor graphene transfer electrical property Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/9a26b7fbeecb49fc8444a6a06de6dd43
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spelling	oai:doaj.org-article:9a26b7fbeecb49fc8444a6a06de6dd432021-11-11T19:13:35ZPerformance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method10.3390/s212172621424-8220https://doaj.org/article/9a26b7fbeecb49fc8444a6a06de6dd432021-10-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/21/7262https://doaj.org/toc/1424-8220We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.Yamujin JangYoung-Min SeoHyeon-Sik JangKeun HeoDongmok WhangMDPI AGarticlegraphenefield-effect transistorgraphene transferelectrical propertyChemical technologyTP1-1185ENSensors, Vol 21, Iss 7262, p 7262 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	graphene field-effect transistor graphene transfer electrical property Chemical technology TP1-1185
spellingShingle	graphene field-effect transistor graphene transfer electrical property Chemical technology TP1-1185 Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
description	We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.
format	article
author	Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang
author_facet	Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang
author_sort	Yamujin Jang
title	Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
title_short	Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
title_full	Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
title_fullStr	Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
title_full_unstemmed	Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
title_sort	performance improvement of residue-free graphene field-effect transistor using au-assisted transfer method
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/9a26b7fbeecb49fc8444a6a06de6dd43
work_keys_str_mv	AT yamujinjang performanceimprovementofresiduefreegraphenefieldeffecttransistorusingauassistedtransfermethod AT youngminseo performanceimprovementofresiduefreegraphenefieldeffecttransistorusingauassistedtransfermethod AT hyeonsikjang performanceimprovementofresiduefreegraphenefieldeffecttransistorusingauassistedtransfermethod AT keunheo performanceimprovementofresiduefreegraphenefieldeffecttransistorusingauassistedtransfermethod AT dongmokwhang performanceimprovementofresiduefreegraphenefieldeffecttransistorusingauassistedtransfermethod
_version_	1718431599543975936

Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

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