3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using su...

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Autores principales:	Nathan Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, William D. Oliver, R. McDermott, M. A. Eriksson
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95
Acceso en línea:	https://doaj.org/article/9a60e9ddbbf641f58c2b003f5e92ca12
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spelling	oai:doaj.org-article:9a60e9ddbbf641f58c2b003f5e92ca122021-12-02T18:03:04Z3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator10.1038/s41534-021-00469-02056-6387https://doaj.org/article/9a60e9ddbbf641f58c2b003f5e92ca122021-09-01T00:00:00Zhttps://doi.org/10.1038/s41534-021-00469-0https://doaj.org/toc/2056-6387Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon Q L = 2.14 × 104 with Q i ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.Nathan HolmanD. RosenbergD. YostJ. L. YoderR. DasWilliam D. OliverR. McDermottM. A. ErikssonNature PortfolioarticlePhysicsQC1-999Electronic computers. Computer scienceQA75.5-76.95ENnpj Quantum Information, Vol 7, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95
spellingShingle	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95 Nathan Holman D. Rosenberg D. Yost J. L. Yoder R. Das William D. Oliver R. McDermott M. A. Eriksson 3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
description	Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon Q L = 2.14 × 104 with Q i ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.
format	article
author	Nathan Holman D. Rosenberg D. Yost J. L. Yoder R. Das William D. Oliver R. McDermott M. A. Eriksson
author_facet	Nathan Holman D. Rosenberg D. Yost J. L. Yoder R. Das William D. Oliver R. McDermott M. A. Eriksson
author_sort	Nathan Holman
title	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
title_short	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
title_full	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
title_fullStr	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
title_full_unstemmed	3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator
title_sort	3d integration and measurement of a semiconductor double quantum dot with a high-impedance tin resonator
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/9a60e9ddbbf641f58c2b003f5e92ca12
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3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

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