Van der Waals engineering of ferroelectric heterostructures for long-retention memory

The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single cr...

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Autores principales: Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/9ad4d3622c3f4336850233ae14c3daa3
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spelling oai:doaj.org-article:9ad4d3622c3f4336850233ae14c3daa32021-12-02T12:11:11ZVan der Waals engineering of ferroelectric heterostructures for long-retention memory10.1038/s41467-021-21320-22041-1723https://doaj.org/article/9ad4d3622c3f4336850233ae14c3daa32021-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-21320-2https://doaj.org/toc/2041-1723The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals.Xiaowei WangChao ZhuYa DengRuihuan DuanJieqiong ChenQingsheng ZengJiadong ZhouQundong FuLu YouSong LiuJames H. EdgarPeng YuZheng LiuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Xiaowei Wang
Chao Zhu
Ya Deng
Ruihuan Duan
Jieqiong Chen
Qingsheng Zeng
Jiadong Zhou
Qundong Fu
Lu You
Song Liu
James H. Edgar
Peng Yu
Zheng Liu
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
description The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals.
format article
author Xiaowei Wang
Chao Zhu
Ya Deng
Ruihuan Duan
Jieqiong Chen
Qingsheng Zeng
Jiadong Zhou
Qundong Fu
Lu You
Song Liu
James H. Edgar
Peng Yu
Zheng Liu
author_facet Xiaowei Wang
Chao Zhu
Ya Deng
Ruihuan Duan
Jieqiong Chen
Qingsheng Zeng
Jiadong Zhou
Qundong Fu
Lu You
Song Liu
James H. Edgar
Peng Yu
Zheng Liu
author_sort Xiaowei Wang
title Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_short Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_full Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_fullStr Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_full_unstemmed Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_sort van der waals engineering of ferroelectric heterostructures for long-retention memory
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/9ad4d3622c3f4336850233ae14c3daa3
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