ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing

Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, neuromorphic computing system has the potential to...

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Autores principales: Yifu Huang, Yuqian Gu, Xiaohan Wu, Ruijing Ge, Yao-Feng Chang, Xiyu Wang, Jiahan Zhang, Deji Akinwande, Jack C. Lee
Formato: article
Lenguaje:EN
Publicado: Frontiers Media S.A. 2021
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Acceso en línea:https://doaj.org/article/9afa5e0c0f2444b793a6d66fb61d8136
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