A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate

Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and Technology, Daejeon, Republic of Korea *These authors...

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Autores principales:	Son HW, Jeun M, Choi J, Lee KH
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2017
Materias:	Biosensor transistor SnO2 voltage Drift sensing gate Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/9b06f493f60a4860ae1d0079b887988f
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spelling	oai:doaj.org-article:9b06f493f60a4860ae1d0079b887988f2021-12-02T00:37:18ZA strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate1178-2013https://doaj.org/article/9b06f493f60a4860ae1d0079b887988f2017-04-01T00:00:00Zhttps://www.dovepress.com/a-strategy-to-minimize-the-sensing-voltage-drift-error-in-a-transistor-peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and Technology, Daejeon, Republic of Korea *These authors contributed equally to this work Abstract: An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and for reducing undesirable ion reactions in sample solutions. The ISFET biosensor with surface-modified GOL shows significantly reduced sensing signal error compared with an ISFET with bare GOL in both diluted and undiluted phosphate buffered saline solutions. Keywords: extended gate, surface treatment, biosensor, SnO2, ISFETSon HWJeun MChoi JLee KHDove Medical PressarticleBiosensortransistorSnO2voltage Driftsensing gateMedicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 12, Pp 2951-2956 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biosensor transistor SnO2 voltage Drift sensing gate Medicine (General) R5-920
spellingShingle	Biosensor transistor SnO2 voltage Drift sensing gate Medicine (General) R5-920 Son HW Jeun M Choi J Lee KH A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
description	Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and Technology, Daejeon, Republic of Korea *These authors contributed equally to this work Abstract: An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and for reducing undesirable ion reactions in sample solutions. The ISFET biosensor with surface-modified GOL shows significantly reduced sensing signal error compared with an ISFET with bare GOL in both diluted and undiluted phosphate buffered saline solutions. Keywords: extended gate, surface treatment, biosensor, SnO2, ISFET
format	article
author	Son HW Jeun M Choi J Lee KH
author_facet	Son HW Jeun M Choi J Lee KH
author_sort	Son HW
title	A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
title_short	A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
title_full	A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
title_fullStr	A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
title_full_unstemmed	A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
title_sort	strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
publisher	Dove Medical Press
publishDate	2017
url	https://doaj.org/article/9b06f493f60a4860ae1d0079b887988f
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A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate

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