An advanced III-V-on-silicon photonic integration platform

In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promisin...

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Autores principales:	Yingtao Hu, Di Liang, Raymond G. Beausoleil
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2021
Materias:	si photonics iii-v-on-si laser photonic integration epitaxy regrowth Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/9b955c7e81a74ddd924c0827f4c89960
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id	oai:doaj.org-article:9b955c7e81a74ddd924c0827f4c89960
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spelling	oai:doaj.org-article:9b955c7e81a74ddd924c0827f4c899602021-11-17T07:53:29ZAn advanced III-V-on-silicon photonic integration platform2096-457910.29026/oea.2021.200094https://doaj.org/article/9b955c7e81a74ddd924c0827f4c899602021-09-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2021.200094https://doaj.org/toc/2096-4579In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.Yingtao HuDi LiangRaymond G. BeausoleilInstitue of Optics and Electronics, Chinese Academy of Sciencesarticlesi photonicsiii-v-on-si laserphotonic integrationepitaxy regrowthOptics. LightQC350-467ENOpto-Electronic Advances, Vol 4, Iss 9, Pp 1-14 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	si photonics iii-v-on-si laser photonic integration epitaxy regrowth Optics. Light QC350-467
spellingShingle	si photonics iii-v-on-si laser photonic integration epitaxy regrowth Optics. Light QC350-467 Yingtao Hu Di Liang Raymond G. Beausoleil An advanced III-V-on-silicon photonic integration platform
description	In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.
format	article
author	Yingtao Hu Di Liang Raymond G. Beausoleil
author_facet	Yingtao Hu Di Liang Raymond G. Beausoleil
author_sort	Yingtao Hu
title	An advanced III-V-on-silicon photonic integration platform
title_short	An advanced III-V-on-silicon photonic integration platform
title_full	An advanced III-V-on-silicon photonic integration platform
title_fullStr	An advanced III-V-on-silicon photonic integration platform
title_full_unstemmed	An advanced III-V-on-silicon photonic integration platform
title_sort	advanced iii-v-on-silicon photonic integration platform
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2021
url	https://doaj.org/article/9b955c7e81a74ddd924c0827f4c89960
work_keys_str_mv	AT yingtaohu anadvancediiivonsiliconphotonicintegrationplatform AT diliang anadvancediiivonsiliconphotonicintegrationplatform AT raymondgbeausoleil anadvancediiivonsiliconphotonicintegrationplatform AT yingtaohu advancediiivonsiliconphotonicintegrationplatform AT diliang advancediiivonsiliconphotonicintegrationplatform AT raymondgbeausoleil advancediiivonsiliconphotonicintegrationplatform
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An advanced III-V-on-silicon photonic integration platform

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