Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7

Abstract Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re3Ge7, which undergoes a second-ord...

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Autores principales:	Yanwei Cui, Siqi Wu, Qinqing Zhu, Guorui Xiao, Bin Liu, Jifeng Wu, Guanghan Cao, Zhi Ren
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/9bbd7fcbe44a4664a59169b511133790
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spelling	oai:doaj.org-article:9bbd7fcbe44a4664a59169b5111337902021-12-02T16:27:56ZMetal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge710.1038/s41535-021-00372-z2397-4648https://doaj.org/article/9bbd7fcbe44a4664a59169b5111337902021-08-01T00:00:00Zhttps://doi.org/10.1038/s41535-021-00372-zhttps://doaj.org/toc/2397-4648Abstract Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re3Ge7, which undergoes a second-order metal–insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re3Ge7−x Ga x . As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and T c exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re3Ge7 is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re3Ge7 provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.Yanwei CuiSiqi WuQinqing ZhuGuorui XiaoBin LiuJifeng WuGuanghan CaoZhi RenNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 6, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Yanwei Cui Siqi Wu Qinqing Zhu Guorui Xiao Bin Liu Jifeng Wu Guanghan Cao Zhi Ren Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
description	Abstract Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re3Ge7, which undergoes a second-order metal–insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re3Ge7−x Ga x . As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and T c exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re3Ge7 is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re3Ge7 provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.
format	article
author	Yanwei Cui Siqi Wu Qinqing Zhu Guorui Xiao Bin Liu Jifeng Wu Guanghan Cao Zhi Ren
author_facet	Yanwei Cui Siqi Wu Qinqing Zhu Guorui Xiao Bin Liu Jifeng Wu Guanghan Cao Zhi Ren
author_sort	Yanwei Cui
title	Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
title_short	Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
title_full	Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
title_fullStr	Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
title_full_unstemmed	Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
title_sort	metal–insulator-like transition, superconducting dome and topological electronic structure in ga-doped re3ge7
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/9bbd7fcbe44a4664a59169b511133790
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Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7

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