Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping

Abstract In recent years there has been an increasing effort in improving the performance of Nb3Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigati...

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Autores principales: Chiara Tarantini, Fumitake Kametani, Shreyas Balachandran, Steve M. Heald, Laura Wheatley, Chris R. M. Grovenor, Michael P. Moody, Yi-Feng Su, Peter J. Lee, David C. Larbalestier
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/9c5b35165dfd40c99c21ab25d0b179a9
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spelling oai:doaj.org-article:9c5b35165dfd40c99c21ab25d0b179a92021-12-02T19:12:33ZOrigin of the enhanced Nb3Sn performance by combined Hf and Ta doping10.1038/s41598-021-97353-w2045-2322https://doaj.org/article/9c5b35165dfd40c99c21ab25d0b179a92021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97353-whttps://doaj.org/toc/2045-2322Abstract In recent years there has been an increasing effort in improving the performance of Nb3Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigation of new routes to advance the high-field pinning properties, the irreversibility and the upper critical fields (H Irr and H c2 , respectively). The effect of hafnium addition to the standard Nb-4Ta alloy has been recently demonstrated to be particularly promising and, in this paper, we investigate the origins of the observed improvements of the superconducting properties. Electron microscopy, Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS) and Atom Probe Tomography (APT) characterization clearly show that, in presence of oxygen, both fine Nb3Sn grains and HfO2 nanoparticles form. Although EXAFS is unable to detect significant amounts of Hf in the A15 structure, APT does indeed reveal some residual intragrain metallic Hf. To investigate the layer properties in more detail, we created a microbridge from a thin lamella extracted by Focused Ion Beam (FIB) and measured the transport properties of Ta-Hf-doped Nb3Sn. H c2 (0) is enhanced to 30.8 T by the introduction of Hf, ~ 1 T higher than those of only Ta-doped Nb3Sn, and, even more importantly the position of the pinning force maximum exceeds 6 T, against the typical ~ 4.5–4.7 T of the only Ta-doped material. These results show that the improvements generated by Hf addition can significantly enhance the high-field performance, bringing Nb3Sn closer to the requirements necessary for FCC realization.Chiara TarantiniFumitake KametaniShreyas BalachandranSteve M. HealdLaura WheatleyChris R. M. GrovenorMichael P. MoodyYi-Feng SuPeter J. LeeDavid C. LarbalestierNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Chiara Tarantini
Fumitake Kametani
Shreyas Balachandran
Steve M. Heald
Laura Wheatley
Chris R. M. Grovenor
Michael P. Moody
Yi-Feng Su
Peter J. Lee
David C. Larbalestier
Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
description Abstract In recent years there has been an increasing effort in improving the performance of Nb3Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigation of new routes to advance the high-field pinning properties, the irreversibility and the upper critical fields (H Irr and H c2 , respectively). The effect of hafnium addition to the standard Nb-4Ta alloy has been recently demonstrated to be particularly promising and, in this paper, we investigate the origins of the observed improvements of the superconducting properties. Electron microscopy, Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS) and Atom Probe Tomography (APT) characterization clearly show that, in presence of oxygen, both fine Nb3Sn grains and HfO2 nanoparticles form. Although EXAFS is unable to detect significant amounts of Hf in the A15 structure, APT does indeed reveal some residual intragrain metallic Hf. To investigate the layer properties in more detail, we created a microbridge from a thin lamella extracted by Focused Ion Beam (FIB) and measured the transport properties of Ta-Hf-doped Nb3Sn. H c2 (0) is enhanced to 30.8 T by the introduction of Hf, ~ 1 T higher than those of only Ta-doped Nb3Sn, and, even more importantly the position of the pinning force maximum exceeds 6 T, against the typical ~ 4.5–4.7 T of the only Ta-doped material. These results show that the improvements generated by Hf addition can significantly enhance the high-field performance, bringing Nb3Sn closer to the requirements necessary for FCC realization.
format article
author Chiara Tarantini
Fumitake Kametani
Shreyas Balachandran
Steve M. Heald
Laura Wheatley
Chris R. M. Grovenor
Michael P. Moody
Yi-Feng Su
Peter J. Lee
David C. Larbalestier
author_facet Chiara Tarantini
Fumitake Kametani
Shreyas Balachandran
Steve M. Heald
Laura Wheatley
Chris R. M. Grovenor
Michael P. Moody
Yi-Feng Su
Peter J. Lee
David C. Larbalestier
author_sort Chiara Tarantini
title Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
title_short Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
title_full Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
title_fullStr Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
title_full_unstemmed Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping
title_sort origin of the enhanced nb3sn performance by combined hf and ta doping
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/9c5b35165dfd40c99c21ab25d0b179a9
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