Physical origins of current and temperature controlled negative differential resistances in NbO2

The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

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Detalles Bibliográficos
Autores principales: Suhas Kumar, Ziwen Wang, Noraica Davila, Niru Kumari, Kate J. Norris, Xiaopeng Huang, John Paul Strachan, David Vine, A.L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/9cacbc93e15e4d6faea02286889b8cf5
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Sumario:The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.