Physical origins of current and temperature controlled negative differential resistances in NbO2

The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

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Autores principales:	Suhas Kumar, Ziwen Wang, Noraica Davila, Niru Kumari, Kate J. Norris, Xiaopeng Huang, John Paul Strachan, David Vine, A.L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/9cacbc93e15e4d6faea02286889b8cf5
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spelling	oai:doaj.org-article:9cacbc93e15e4d6faea02286889b8cf52021-12-02T14:42:27ZPhysical origins of current and temperature controlled negative differential resistances in NbO210.1038/s41467-017-00773-42041-1723https://doaj.org/article/9cacbc93e15e4d6faea02286889b8cf52017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00773-4https://doaj.org/toc/2041-1723The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.Suhas KumarZiwen WangNoraica DavilaNiru KumariKate J. NorrisXiaopeng HuangJohn Paul StrachanDavid VineA.L. David KilcoyneYoshio NishiR. Stanley WilliamsNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Suhas Kumar Ziwen Wang Noraica Davila Niru Kumari Kate J. Norris Xiaopeng Huang John Paul Strachan David Vine A.L. David Kilcoyne Yoshio Nishi R. Stanley Williams Physical origins of current and temperature controlled negative differential resistances in NbO2
description	The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.
format	article
author	Suhas Kumar Ziwen Wang Noraica Davila Niru Kumari Kate J. Norris Xiaopeng Huang John Paul Strachan David Vine A.L. David Kilcoyne Yoshio Nishi R. Stanley Williams
author_facet	Suhas Kumar Ziwen Wang Noraica Davila Niru Kumari Kate J. Norris Xiaopeng Huang John Paul Strachan David Vine A.L. David Kilcoyne Yoshio Nishi R. Stanley Williams
author_sort	Suhas Kumar
title	Physical origins of current and temperature controlled negative differential resistances in NbO2
title_short	Physical origins of current and temperature controlled negative differential resistances in NbO2
title_full	Physical origins of current and temperature controlled negative differential resistances in NbO2
title_fullStr	Physical origins of current and temperature controlled negative differential resistances in NbO2
title_full_unstemmed	Physical origins of current and temperature controlled negative differential resistances in NbO2
title_sort	physical origins of current and temperature controlled negative differential resistances in nbo2
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/9cacbc93e15e4d6faea02286889b8cf5
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Physical origins of current and temperature controlled negative differential resistances in NbO2

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