NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

Purpose. Silicon heterostructure solar cells, particularly Heterojunction with Intrinsic Thin layer (HIT) cells, are of recommended silicon cells in recent years that are simply fabricated at low processing temperature and have high optical and temperature stability and better efficiency than homoju...

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Autor principal:	Jabbar Ganji
Formato:	article
Lenguaje:	EN RU UK
Publicado:	National Technical University "Kharkiv Polytechnic Institute" 2017
Materias:	heterojunction with intrinsic thin layer cell high temperature thermal behavior Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/9cb352c7733c40b1a2718f6fd037310c
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id	oai:doaj.org-article:9cb352c7733c40b1a2718f6fd037310c
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spelling	oai:doaj.org-article:9cb352c7733c40b1a2718f6fd037310c2021-12-02T15:28:53ZNUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES10.20998/2074-272X.2017.6.072074-272X2309-3404https://doaj.org/article/9cb352c7733c40b1a2718f6fd037310c2017-12-01T00:00:00Zhttp://eie.khpi.edu.ua/article/view/2074-272X.2017.6.07/111225https://doaj.org/toc/2074-272Xhttps://doaj.org/toc/2309-3404Purpose. Silicon heterostructure solar cells, particularly Heterojunction with Intrinsic Thin layer (HIT) cells, are of recommended silicon cells in recent years that are simply fabricated at low processing temperature and have high optical and temperature stability and better efficiency than homojunction solar cells. In this paper, at first a relatively accurate computational model is suggested for more precise calculation of the thermal behavior of such cells. In this model, the thermal dependency of many parameters such as mobility, thermal velocity of carriers, band gap, Urbach energy of band tails, electron affinity, relative permittivity, and effective density of states in the valence and conduction bands are considered for all semiconductor layers. The thermal behavior of HIT solar cells in the range of 25-75 °C is studied by using of this model. The effect of the thickness of different layers of HIT cell on its external parameters has been investigated in this temperature range, and finally the optimal thicknesses of HIT solar cell layers to use in wide temperature range are proposed.Jabbar GanjiNational Technical University "Kharkiv Polytechnic Institute"articleheterojunction with intrinsic thin layer cellhigh temperaturethermal behaviorElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENRUUKElectrical engineering & Electromechanics, Iss 6, Pp 47-52 (2017)
institution	DOAJ
collection	DOAJ
language	EN RU UK
topic	heterojunction with intrinsic thin layer cell high temperature thermal behavior Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	heterojunction with intrinsic thin layer cell high temperature thermal behavior Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jabbar Ganji NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
description	Purpose. Silicon heterostructure solar cells, particularly Heterojunction with Intrinsic Thin layer (HIT) cells, are of recommended silicon cells in recent years that are simply fabricated at low processing temperature and have high optical and temperature stability and better efficiency than homojunction solar cells. In this paper, at first a relatively accurate computational model is suggested for more precise calculation of the thermal behavior of such cells. In this model, the thermal dependency of many parameters such as mobility, thermal velocity of carriers, band gap, Urbach energy of band tails, electron affinity, relative permittivity, and effective density of states in the valence and conduction bands are considered for all semiconductor layers. The thermal behavior of HIT solar cells in the range of 25-75 °C is studied by using of this model. The effect of the thickness of different layers of HIT cell on its external parameters has been investigated in this temperature range, and finally the optimal thicknesses of HIT solar cell layers to use in wide temperature range are proposed.
format	article
author	Jabbar Ganji
author_facet	Jabbar Ganji
author_sort	Jabbar Ganji
title	NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
title_short	NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
title_full	NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
title_fullStr	NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
title_full_unstemmed	NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES
title_sort	numerical simulation of thermal behavior and optimization of a-si/a-si/c-si/a-si/a-si hit solar cell at high temperatures
publisher	National Technical University "Kharkiv Polytechnic Institute"
publishDate	2017
url	https://doaj.org/article/9cb352c7733c40b1a2718f6fd037310c
work_keys_str_mv	AT jabbarganji numericalsimulationofthermalbehaviorandoptimizationofasiasicsiasiasihitsolarcellathightemperatures
_version_	1718387219718209536

NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

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