Numerical modeling of detection in low temperature diode detectors

Diode detectors (DDs) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. The possibilities of preparing DDs...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/9ccad6a7862c480c84c333afe20e28fd
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:9ccad6a7862c480c84c333afe20e28fd
record_format	dspace
spelling	oai:doaj.org-article:9ccad6a7862c480c84c333afe20e28fd2021-11-21T12:03:57ZNumerical modeling of detection in low temperature diode detectors2537-63651810-648Xhttps://doaj.org/article/9ccad6a7862c480c84c333afe20e28fd2010-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4229https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Diode detectors (DDs) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the DD parameters is studied. Also, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 4.2 K are discussed. The comparison with existent literature data shows that the proposed DDs can be 10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their development is an urgent problem. Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 2, Pp 186-190 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Numerical modeling of detection in low temperature diode detectors
description	Diode detectors (DDs) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the DD parameters is studied. Also, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 4.2 K are discussed. The comparison with existent literature data shows that the proposed DDs can be 10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their development is an urgent problem.
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	Numerical modeling of detection in low temperature diode detectors
title_short	Numerical modeling of detection in low temperature diode detectors
title_full	Numerical modeling of detection in low temperature diode detectors
title_fullStr	Numerical modeling of detection in low temperature diode detectors
title_full_unstemmed	Numerical modeling of detection in low temperature diode detectors
title_sort	numerical modeling of detection in low temperature diode detectors
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/9ccad6a7862c480c84c333afe20e28fd
work_keys_str_mv	AT cherneriacov numericalmodelingofdetectioninlowtemperaturediodedetectors
_version_	1718419262044897280

Numerical modeling of detection in low temperature diode detectors

Ejemplares similares