Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
Abstract We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9d07d6a0875849adb74dc457f51188ac |
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| Sumario: | Abstract We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K. |
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