BiSbO4 phase and its behavior under the action of light
BiSbO phase was prepared using a method similar to that used for making ceramics. Its properties (photoluminescence and water photocatalysis) were studied. The main parameters of the material were studied and their interpretation was proposed. In recent years, a new scientific direction appeared: t...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9d2ae3a1eaaf454b9b988884907bc87a |
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| Sumario: | BiSbO phase was prepared using a method similar to that used for making ceramics. Its
properties (photoluminescence and water photocatalysis) were studied. The main parameters of the material were studied and their interpretation was proposed. In recent years, a new scientific direction appeared: the growth and characterization of
semiconductors that can decompose water into hydrogen and oxygen under illumination. When the first successful experiments in this field were fulfilled, this became promising to obtain a clean and renewable source of hydrogen fuel that is in great demand nowadays. First of all, among these semiconductors, oxide materials BiTaO4, InNbO4, InTaO4, Bi RNbO7 (R = Y, Ce, … La), etc., dominate that can be doped or their composition can be varied to increase the H yield [1-4]. Investigation of this problem is very attractive. In the given paper, we report the results related to the preparation of BiSbO4 semiconductor oxide similar to In-NbO4 and its characterization under the action of light.
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