BiSbO4 phase and its behavior under the action of light

BiSbO phase was prepared using a method similar to that used for making ceramics. Its properties (photoluminescence and water photocatalysis) were studied. The main parameters of the material were studied and their interpretation was proposed. In recent years, a new scientific direction appeared: t...

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Autores principales:	Muntean, Ştefan, Jitari, Vasile, Volodina, Galina, Pavlenco, Vladimir
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/9d2ae3a1eaaf454b9b988884907bc87a
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spelling	oai:doaj.org-article:9d2ae3a1eaaf454b9b988884907bc87a2021-11-21T12:04:37ZBiSbO4 phase and its behavior under the action of light 2537-63651810-648Xhttps://doaj.org/article/9d2ae3a1eaaf454b9b988884907bc87a2009-09-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4149https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365BiSbO phase was prepared using a method similar to that used for making ceramics. Its properties (photoluminescence and water photocatalysis) were studied. The main parameters of the material were studied and their interpretation was proposed. In recent years, a new scientific direction appeared: the growth and characterization of semiconductors that can decompose water into hydrogen and oxygen under illumination. When the first successful experiments in this field were fulfilled, this became promising to obtain a clean and renewable source of hydrogen fuel that is in great demand nowadays. First of all, among these semiconductors, oxide materials BiTaO4, InNbO4, InTaO4, Bi RNbO7 (R = Y, Ce, … La), etc., dominate that can be doped or their composition can be varied to increase the H yield [1-4]. Investigation of this problem is very attractive. In the given paper, we report the results related to the preparation of BiSbO4 semiconductor oxide similar to In-NbO4 and its characterization under the action of light. Muntean, ŞtefanJitari, VasileVolodina, GalinaPavlenco, VladimirD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 3-4, Pp 283-286 (2009)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Muntean, Ştefan Jitari, Vasile Volodina, Galina Pavlenco, Vladimir BiSbO4 phase and its behavior under the action of light
description	BiSbO phase was prepared using a method similar to that used for making ceramics. Its properties (photoluminescence and water photocatalysis) were studied. The main parameters of the material were studied and their interpretation was proposed. In recent years, a new scientific direction appeared: the growth and characterization of semiconductors that can decompose water into hydrogen and oxygen under illumination. When the first successful experiments in this field were fulfilled, this became promising to obtain a clean and renewable source of hydrogen fuel that is in great demand nowadays. First of all, among these semiconductors, oxide materials BiTaO4, InNbO4, InTaO4, Bi RNbO7 (R = Y, Ce, … La), etc., dominate that can be doped or their composition can be varied to increase the H yield [1-4]. Investigation of this problem is very attractive. In the given paper, we report the results related to the preparation of BiSbO4 semiconductor oxide similar to In-NbO4 and its characterization under the action of light.
format	article
author	Muntean, Ştefan Jitari, Vasile Volodina, Galina Pavlenco, Vladimir
author_facet	Muntean, Ştefan Jitari, Vasile Volodina, Galina Pavlenco, Vladimir
author_sort	Muntean, Ştefan
title	BiSbO4 phase and its behavior under the action of light
title_short	BiSbO4 phase and its behavior under the action of light
title_full	BiSbO4 phase and its behavior under the action of light
title_fullStr	BiSbO4 phase and its behavior under the action of light
title_full_unstemmed	BiSbO4 phase and its behavior under the action of light
title_sort	bisbo4 phase and its behavior under the action of light
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2009
url	https://doaj.org/article/9d2ae3a1eaaf454b9b988884907bc87a
work_keys_str_mv	AT munteanstefan bisbo4phaseanditsbehaviorundertheactionoflight AT jitarivasile bisbo4phaseanditsbehaviorundertheactionoflight AT volodinagalina bisbo4phaseanditsbehaviorundertheactionoflight AT pavlencovladimir bisbo4phaseanditsbehaviorundertheactionoflight
_version_	1718419262261952512

BiSbO4 phase and its behavior under the action of light

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