Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2

Controllable electric transport of topological particles in solid state systems hold the key towards novel electronic applications. Here, Wang et al. demonstrate gate-tunable negative longitudinal magnetoresistance in WTe2, featuring controllable transport of Type-II Weyl fermions.

Guardado en:
Detalles Bibliográficos
Autores principales: Yaojia Wang, Erfu Liu, Huimei Liu, Yiming Pan, Longqiang Zhang, Junwen Zeng, Yajun Fu, Miao Wang, Kang Xu, Zhong Huang, Zhenlin Wang, Hai-Zhou Lu, Dingyu Xing, Baigeng Wang, Xiangang Wan, Feng Miao
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/9d741040d9b444e08135b0349df9e322
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:9d741040d9b444e08135b0349df9e322
record_format dspace
spelling oai:doaj.org-article:9d741040d9b444e08135b0349df9e3222021-12-02T16:57:04ZGate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe210.1038/ncomms131422041-1723https://doaj.org/article/9d741040d9b444e08135b0349df9e3222016-10-01T00:00:00Zhttps://doi.org/10.1038/ncomms13142https://doaj.org/toc/2041-1723Controllable electric transport of topological particles in solid state systems hold the key towards novel electronic applications. Here, Wang et al. demonstrate gate-tunable negative longitudinal magnetoresistance in WTe2, featuring controllable transport of Type-II Weyl fermions.Yaojia WangErfu LiuHuimei LiuYiming PanLongqiang ZhangJunwen ZengYajun FuMiao WangKang XuZhong HuangZhenlin WangHai-Zhou LuDingyu XingBaigeng WangXiangang WanFeng MiaoNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Yaojia Wang
Erfu Liu
Huimei Liu
Yiming Pan
Longqiang Zhang
Junwen Zeng
Yajun Fu
Miao Wang
Kang Xu
Zhong Huang
Zhenlin Wang
Hai-Zhou Lu
Dingyu Xing
Baigeng Wang
Xiangang Wan
Feng Miao
Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
description Controllable electric transport of topological particles in solid state systems hold the key towards novel electronic applications. Here, Wang et al. demonstrate gate-tunable negative longitudinal magnetoresistance in WTe2, featuring controllable transport of Type-II Weyl fermions.
format article
author Yaojia Wang
Erfu Liu
Huimei Liu
Yiming Pan
Longqiang Zhang
Junwen Zeng
Yajun Fu
Miao Wang
Kang Xu
Zhong Huang
Zhenlin Wang
Hai-Zhou Lu
Dingyu Xing
Baigeng Wang
Xiangang Wan
Feng Miao
author_facet Yaojia Wang
Erfu Liu
Huimei Liu
Yiming Pan
Longqiang Zhang
Junwen Zeng
Yajun Fu
Miao Wang
Kang Xu
Zhong Huang
Zhenlin Wang
Hai-Zhou Lu
Dingyu Xing
Baigeng Wang
Xiangang Wan
Feng Miao
author_sort Yaojia Wang
title Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
title_short Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
title_full Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
title_fullStr Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
title_full_unstemmed Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
title_sort gate-tunable negative longitudinal magnetoresistance in the predicted type-ii weyl semimetal wte2
publisher Nature Portfolio
publishDate 2016
url https://doaj.org/article/9d741040d9b444e08135b0349df9e322
work_keys_str_mv AT yaojiawang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT erfuliu gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT huimeiliu gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT yimingpan gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT longqiangzhang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT junwenzeng gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT yajunfu gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT miaowang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT kangxu gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT zhonghuang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT zhenlinwang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT haizhoulu gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT dingyuxing gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT baigengwang gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT xiangangwan gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
AT fengmiao gatetunablenegativelongitudinalmagnetoresistanceinthepredictedtypeiiweylsemimetalwte2
_version_ 1718382638503297024