Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2

Controllable electric transport of topological particles in solid state systems hold the key towards novel electronic applications. Here, Wang et al. demonstrate gate-tunable negative longitudinal magnetoresistance in WTe2, featuring controllable transport of Type-II Weyl fermions.

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Detalles Bibliográficos
Autores principales: Yaojia Wang, Erfu Liu, Huimei Liu, Yiming Pan, Longqiang Zhang, Junwen Zeng, Yajun Fu, Miao Wang, Kang Xu, Zhong Huang, Zhenlin Wang, Hai-Zhou Lu, Dingyu Xing, Baigeng Wang, Xiangang Wan, Feng Miao
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Science
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Acceso en línea:https://doaj.org/article/9d741040d9b444e08135b0349df9e322
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https://doaj.org/article/9d741040d9b444e08135b0349df9e322

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