Semiconductor-oxide nanocomposites based on porous semiconductors
Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/9e21e8ea12564bc9ac41a109aa76f0c9 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs
templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by
GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to
900 o
C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH
solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in
composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on
GaAs templates. 4f-4f intrashell transitions in Eu3
and Er3
ions assure strong red and green
emission from these nanophases. |
|---|