Semiconductor-oxide nanocomposites based on porous semiconductors

Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er...

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Autores principales:	Hmelevschi, Leonid, Tighineanu, Ion, Ursachi, Veaceslav, Dolgaleva, Ksenia, Boyd, Robert W.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/9e21e8ea12564bc9ac41a109aa76f0c9
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spelling	oai:doaj.org-article:9e21e8ea12564bc9ac41a109aa76f0c92021-11-21T12:07:53ZSemiconductor-oxide nanocomposites based on porous semiconductors2537-63651810-648Xhttps://doaj.org/article/9e21e8ea12564bc9ac41a109aa76f0c92007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3703https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on GaAs templates. 4f-4f intrashell transitions in Eu3 and Er3 ions assure strong red and green emission from these nanophases. Hmelevschi, LeonidTighineanu, IonUrsachi, VeaceslavDolgaleva, KseniaBoyd, Robert W.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 142-147 (2007)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Hmelevschi, Leonid Tighineanu, Ion Ursachi, Veaceslav Dolgaleva, Ksenia Boyd, Robert W. Semiconductor-oxide nanocomposites based on porous semiconductors
description	Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on GaAs templates. 4f-4f intrashell transitions in Eu3 and Er3 ions assure strong red and green emission from these nanophases.
format	article
author	Hmelevschi, Leonid Tighineanu, Ion Ursachi, Veaceslav Dolgaleva, Ksenia Boyd, Robert W.
author_facet	Hmelevschi, Leonid Tighineanu, Ion Ursachi, Veaceslav Dolgaleva, Ksenia Boyd, Robert W.
author_sort	Hmelevschi, Leonid
title	Semiconductor-oxide nanocomposites based on porous semiconductors
title_short	Semiconductor-oxide nanocomposites based on porous semiconductors
title_full	Semiconductor-oxide nanocomposites based on porous semiconductors
title_fullStr	Semiconductor-oxide nanocomposites based on porous semiconductors
title_full_unstemmed	Semiconductor-oxide nanocomposites based on porous semiconductors
title_sort	semiconductor-oxide nanocomposites based on porous semiconductors
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2007
url	https://doaj.org/article/9e21e8ea12564bc9ac41a109aa76f0c9
work_keys_str_mv	AT hmelevschileonid semiconductoroxidenanocompositesbasedonporoussemiconductors AT tighineanuion semiconductoroxidenanocompositesbasedonporoussemiconductors AT ursachiveaceslav semiconductoroxidenanocompositesbasedonporoussemiconductors AT dolgalevaksenia semiconductoroxidenanocompositesbasedonporoussemiconductors AT boydrobertw semiconductoroxidenanocompositesbasedonporoussemiconductors
_version_	1718419201956249600

Semiconductor-oxide nanocomposites based on porous semiconductors

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