Semiconductor-oxide nanocomposites based on porous semiconductors

Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Hmelevschi, Leonid, Tighineanu, Ion, Ursachi, Veaceslav, Dolgaleva, Ksenia, Boyd, Robert W.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:
Acceso en línea:https://doaj.org/article/9e21e8ea12564bc9ac41a109aa76f0c9
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!