Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

This study carried out on the effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of ZnO thin film. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO th...

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Autores principales:	Yus Rama Denny Muchtar, Teguh Firmansyah, Adhitya Trenggono, Danu Wijaya, Ganesha Antarnusa, Andri Suherman
Formato:	article
Lenguaje:	EN
Publicado:	University of Brawijaya 2020
Materias:	zno thin films concentration precursors annealed temperature spray pyrolysis Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/9e8e0063ee21498a9220e5700df2756d
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spelling	oai:doaj.org-article:9e8e0063ee21498a9220e5700df2756d2021-12-02T18:02:12ZEffect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film2302-46902302-4690https://doaj.org/article/9e8e0063ee21498a9220e5700df2756d2020-04-01T00:00:00Zhttps://jpacr.ub.ac.id/index.php/jpacr/article/view/514/pdfhttps://doaj.org/toc/2302-4690https://doaj.org/toc/2302-4690This study carried out on the effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of ZnO thin film. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO thin film was deposited on the glass substrate by Spray Pyrolysis Deposition and annealed with different temperature from 300 oC to 600 oC. The crystal structure, electronic and optical properties were investigated by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and UV-Spectrometer. XRD result showed that all thin films have amorphous hexagonal wurtzite crystalline. Particle sizes ranging from 21.83 to 43.67 nm were calculated through Debye-Scherer Method. It showed that the concentration of the precursor had slightly impact on the particle size. Meanwhile, the increase in particle size with increasing annealed temperature is found to be gradual. The average transparent of all thin film was more than 80%. The bandgap of the ZnO thin films was estimated by Tauc Plot Relation. It showed that the bandgap values were increased with the increasing of precursor concentration due to Burstein-Moss Effect. In addition, the decrease in band gap values was found with increasing annealed temperature. Our results demonstrated that the varying precursor concentration and annealed substrate temperature can enhance the structure, electronic and the optical properties of ZnO thin films.Yus Rama Denny Muchtar Teguh FirmansyahAdhitya TrenggonoDanu WijayaGanesha AntarnusaAndri SuhermanUniversity of Brawijayaarticlezno thin filmsconcentration precursorsannealed temperaturespray pyrolysisChemistryQD1-999ENJournal of Pure and Applied Chemistry Research, Vol 9, Iss 1, Pp 57-65 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	zno thin films concentration precursors annealed temperature spray pyrolysis Chemistry QD1-999
spellingShingle	zno thin films concentration precursors annealed temperature spray pyrolysis Chemistry QD1-999 Yus Rama Denny Muchtar Teguh Firmansyah Adhitya Trenggono Danu Wijaya Ganesha Antarnusa Andri Suherman Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
description	This study carried out on the effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of ZnO thin film. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO thin film was deposited on the glass substrate by Spray Pyrolysis Deposition and annealed with different temperature from 300 oC to 600 oC. The crystal structure, electronic and optical properties were investigated by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and UV-Spectrometer. XRD result showed that all thin films have amorphous hexagonal wurtzite crystalline. Particle sizes ranging from 21.83 to 43.67 nm were calculated through Debye-Scherer Method. It showed that the concentration of the precursor had slightly impact on the particle size. Meanwhile, the increase in particle size with increasing annealed temperature is found to be gradual. The average transparent of all thin film was more than 80%. The bandgap of the ZnO thin films was estimated by Tauc Plot Relation. It showed that the bandgap values were increased with the increasing of precursor concentration due to Burstein-Moss Effect. In addition, the decrease in band gap values was found with increasing annealed temperature. Our results demonstrated that the varying precursor concentration and annealed substrate temperature can enhance the structure, electronic and the optical properties of ZnO thin films.
format	article
author	Yus Rama Denny Muchtar Teguh Firmansyah Adhitya Trenggono Danu Wijaya Ganesha Antarnusa Andri Suherman
author_facet	Yus Rama Denny Muchtar Teguh Firmansyah Adhitya Trenggono Danu Wijaya Ganesha Antarnusa Andri Suherman
author_sort	Yus Rama Denny Muchtar
title	Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
title_short	Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
title_full	Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
title_fullStr	Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
title_full_unstemmed	Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film
title_sort	effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of zno thin film
publisher	University of Brawijaya
publishDate	2020
url	https://doaj.org/article/9e8e0063ee21498a9220e5700df2756d
work_keys_str_mv	AT yusramadennymuchtar effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm AT teguhfirmansyah effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm AT adhityatrenggono effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm AT danuwijaya effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm AT ganeshaantarnusa effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm AT andrisuherman effectofprecursorconcentrationandannealedsubstratetemperatureonthecrystalstructureelectronicandopticalpropertiesofznothinfilm
_version_	1718378944630095872

Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

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