Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions

The synthesis, characterization, and photodetector application of pure and Ni doped CdS thin films prepared by the spray pyrolysis technique are presented in this paper. Various techniques were used to analyze the thin films that had been produced. The hexagonal phase of the produced thin films is c...

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Autores principales:	Hasan Albargi, Z.R. Khan, R. Marnadu, H.Y. Ammar, Hassan Algadi, Ahmad Umar, I.M. Ashraf, Mohd. Shkir
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Ni:CdS thin films Structural properties Optical properties Nonlinear optics Au CdS Au Au Ni:CdS Science (General) Q1-390
Acceso en línea:	https://doaj.org/article/9eab13957a8e4ccbb79fd52e4a7c7ec0
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spelling	oai:doaj.org-article:9eab13957a8e4ccbb79fd52e4a7c7ec02021-11-18T04:44:16ZFabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions1018-364710.1016/j.jksus.2021.101638https://doaj.org/article/9eab13957a8e4ccbb79fd52e4a7c7ec02021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S1018364721003001https://doaj.org/toc/1018-3647The synthesis, characterization, and photodetector application of pure and Ni doped CdS thin films prepared by the spray pyrolysis technique are presented in this paper. Various techniques were used to analyze the thin films that had been produced. The hexagonal phase of the produced thin films is confirmed by X-ray diffraction (XRD) and FT-Raman (FTR) measurements. Scanning electron microscopy (SEM) was used to investigate the morphology of the thin film surface, revealing the development of nanograins. The energy band gaps for all of the prepared thin films were calculated to be approximately 2.4 eV. When the films were stimulated at 450 nm wavelength, a strong photoluminescence emission was seen at ∼540 ± 6 nm. The dark/photo I-V electrical performance of the developed films was observed. The fabricated Au/CdS/Au and Au/Ni:CdS/Au photodetectors were studied for recombination behavior, dark and photo surface resistivity, and photosensitivity. Interestingly, the dark surface resistivity was found to be greater compared to the photo-resistivity. When the light intensity was increased to 1450 Lux, the photosensitivity improves from 10% to 35%. These findings indicate that the fabricated CdS/Ni:CdS films-based photodetectors are suitable for optoelectronic devices.Hasan AlbargiZ.R. KhanR. MarnaduH.Y. AmmarHassan AlgadiAhmad UmarI.M. AshrafMohd. ShkirElsevierarticleNi:CdS thin filmsStructural propertiesOptical propertiesNonlinear opticsAu CdS AuAu Ni:CdSScience (General)Q1-390ENJournal of King Saud University: Science, Vol 33, Iss 8, Pp 101638- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Ni:CdS thin films Structural properties Optical properties Nonlinear optics Au CdS Au Au Ni:CdS Science (General) Q1-390
spellingShingle	Ni:CdS thin films Structural properties Optical properties Nonlinear optics Au CdS Au Au Ni:CdS Science (General) Q1-390 Hasan Albargi Z.R. Khan R. Marnadu H.Y. Ammar Hassan Algadi Ahmad Umar I.M. Ashraf Mohd. Shkir Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
description	The synthesis, characterization, and photodetector application of pure and Ni doped CdS thin films prepared by the spray pyrolysis technique are presented in this paper. Various techniques were used to analyze the thin films that had been produced. The hexagonal phase of the produced thin films is confirmed by X-ray diffraction (XRD) and FT-Raman (FTR) measurements. Scanning electron microscopy (SEM) was used to investigate the morphology of the thin film surface, revealing the development of nanograins. The energy band gaps for all of the prepared thin films were calculated to be approximately 2.4 eV. When the films were stimulated at 450 nm wavelength, a strong photoluminescence emission was seen at ∼540 ± 6 nm. The dark/photo I-V electrical performance of the developed films was observed. The fabricated Au/CdS/Au and Au/Ni:CdS/Au photodetectors were studied for recombination behavior, dark and photo surface resistivity, and photosensitivity. Interestingly, the dark surface resistivity was found to be greater compared to the photo-resistivity. When the light intensity was increased to 1450 Lux, the photosensitivity improves from 10% to 35%. These findings indicate that the fabricated CdS/Ni:CdS films-based photodetectors are suitable for optoelectronic devices.
format	article
author	Hasan Albargi Z.R. Khan R. Marnadu H.Y. Ammar Hassan Algadi Ahmad Umar I.M. Ashraf Mohd. Shkir
author_facet	Hasan Albargi Z.R. Khan R. Marnadu H.Y. Ammar Hassan Algadi Ahmad Umar I.M. Ashraf Mohd. Shkir
author_sort	Hasan Albargi
title	Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
title_short	Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
title_full	Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
title_fullStr	Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
title_full_unstemmed	Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions
title_sort	fabrication and characterization of high-performance photodetectors based on au/cds/au and au/ni:cds/au junctions
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/9eab13957a8e4ccbb79fd52e4a7c7ec0
work_keys_str_mv	AT hasanalbargi fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT zrkhan fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT rmarnadu fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT hyammar fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT hassanalgadi fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT ahmadumar fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT imashraf fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions AT mohdshkir fabricationandcharacterizationofhighperformancephotodetectorsbasedonaucdsauandaunicdsaujunctions
_version_	1718425118192959488

Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions

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