Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films

ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn1-xMxO1−y (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a singl...

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Autores principales:	Samuel Porcar, Jaime González, Diego Fraga, Teodora Stoyanova Lyubenova, Gina Soraca, Juan B. Carda
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	zinc oxide thin films optical properties electrical properties photovoltaic applications Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/9edc95988b7d4429ac4df2ebd8460aee
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spelling	oai:doaj.org-article:9edc95988b7d4429ac4df2ebd8460aee2021-11-11T15:11:19ZEffect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films10.3390/app1121101222076-3417https://doaj.org/article/9edc95988b7d4429ac4df2ebd8460aee2021-10-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/21/10122https://doaj.org/toc/2076-3417ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn<sub>1-x</sub>M<sub>x</sub>O<sub>1−y</sub> (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a single hexagonal phase of wurtzite with preferred crystal growth along the 002 plane. The surface morphology, characterized by SEM, revealed that the grain shape varies depending on the dopant agent used. Optical measurements displayed an increase in the bandgap values for doped films from 3.29 for ZnO to 3.35, 3.32, and 3.36 for Al, Ga, and In doped films, respectively, and an average transmittance superior to 90% in some cases (in the range between 400 and 800 nm). The electrical response of the films was evaluated with a four-point probe being 229.69, 385.71, and 146.94 Ω/sq for aluminium, gallium, and indium doped films, respectively.Samuel PorcarJaime GonzálezDiego FragaTeodora Stoyanova LyubenovaGina SoracaJuan B. CardaMDPI AGarticlezinc oxidethin filmsoptical propertieselectrical propertiesphotovoltaic applicationsTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10122, p 10122 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	zinc oxide thin films optical properties electrical properties photovoltaic applications Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	zinc oxide thin films optical properties electrical properties photovoltaic applications Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Samuel Porcar Jaime González Diego Fraga Teodora Stoyanova Lyubenova Gina Soraca Juan B. Carda Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
description	ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn<sub>1-x</sub>M<sub>x</sub>O<sub>1−y</sub> (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a single hexagonal phase of wurtzite with preferred crystal growth along the 002 plane. The surface morphology, characterized by SEM, revealed that the grain shape varies depending on the dopant agent used. Optical measurements displayed an increase in the bandgap values for doped films from 3.29 for ZnO to 3.35, 3.32, and 3.36 for Al, Ga, and In doped films, respectively, and an average transmittance superior to 90% in some cases (in the range between 400 and 800 nm). The electrical response of the films was evaluated with a four-point probe being 229.69, 385.71, and 146.94 Ω/sq for aluminium, gallium, and indium doped films, respectively.
format	article
author	Samuel Porcar Jaime González Diego Fraga Teodora Stoyanova Lyubenova Gina Soraca Juan B. Carda
author_facet	Samuel Porcar Jaime González Diego Fraga Teodora Stoyanova Lyubenova Gina Soraca Juan B. Carda
author_sort	Samuel Porcar
title	Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
title_short	Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
title_full	Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
title_fullStr	Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
title_full_unstemmed	Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
title_sort	effect of al, ga, and in doping on the optical, structural, and electric properties of zno thin films
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/9edc95988b7d4429ac4df2ebd8460aee
work_keys_str_mv	AT samuelporcar effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms AT jaimegonzalez effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms AT diegofraga effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms AT teodorastoyanovalyubenova effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms AT ginasoraca effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms AT juanbcarda effectofalgaandindopingontheopticalstructuralandelectricpropertiesofznothinfilms
_version_	1718436959663161344

Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films

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