Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn<sub>1-x</sub>M<sub>x</sub>O<sub>1−y</sub> (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a singl...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9edc95988b7d4429ac4df2ebd8460aee |
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