Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
Abstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the to...
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2020
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oai:doaj.org-article:9f19ef1a608f4ff8a3f8d91f381a50d62021-12-02T16:31:18ZWeak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films10.1038/s41598-020-61672-12045-2322https://doaj.org/article/9f19ef1a608f4ff8a3f8d91f381a50d62020-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-61672-1https://doaj.org/toc/2045-2322Abstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance.Gregory M. StephenOwen. A. VailJiwei LuWilliam A. BeckPatrick J. TaylorAdam L. FriedmanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-7 (2020) |
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Medicine R Science Q Gregory M. Stephen Owen. A. Vail Jiwei Lu William A. Beck Patrick J. Taylor Adam L. Friedman Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
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Abstract Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance. |
format |
article |
author |
Gregory M. Stephen Owen. A. Vail Jiwei Lu William A. Beck Patrick J. Taylor Adam L. Friedman |
author_facet |
Gregory M. Stephen Owen. A. Vail Jiwei Lu William A. Beck Patrick J. Taylor Adam L. Friedman |
author_sort |
Gregory M. Stephen |
title |
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
title_short |
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
title_full |
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
title_fullStr |
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
title_full_unstemmed |
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films |
title_sort |
weak antilocalization and anisotropic magnetoresistance as a probe of surface states in topological bi2texse3−x thin films |
publisher |
Nature Portfolio |
publishDate |
2020 |
url |
https://doaj.org/article/9f19ef1a608f4ff8a3f8d91f381a50d6 |
work_keys_str_mv |
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