Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from...

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Autores principales:	Benedikovic Daniel, Virot Leopold, Aubin Guy, Hartmann Jean-Michel, Amar Farah, Le Roux Xavier, Alonso-Ramos Carlos, Dado Milan, Cassan Eric, Marris-Morini Delphine, Fedeli Jean-Marc, Boeuf Frederic, Szelag Bertrand, Vivien Laurent
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/9f1c0c54bbc74040a9239115cff604e8
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id	oai:doaj.org-article:9f1c0c54bbc74040a9239115cff604e8
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spelling	oai:doaj.org-article:9f1c0c54bbc74040a9239115cff604e82021-12-02T17:12:51ZHeterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED2100-014X10.1051/epjconf/202125501002https://doaj.org/article/9f1c0c54bbc74040a9239115cff604e82021-01-01T00:00:00Zhttps://www.epj-conferences.org/articles/epjconf/pdf/2021/09/epjconf_eosam2021_01002.pdfhttps://doaj.org/toc/2100-014XOptical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.Benedikovic DanielVirot LeopoldAubin GuyHartmann Jean-MichelAmar FarahLe Roux XavierAlonso-Ramos CarlosDado MilanCassan EricMarris-Morini DelphineFedeli Jean-MarcBoeuf FredericSzelag BertrandVivien LaurentEDP SciencesarticlePhysicsQC1-999ENEPJ Web of Conferences, Vol 255, p 01002 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Benedikovic Daniel Virot Leopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Dado Milan Cassan Eric Marris-Morini Delphine Fedeli Jean-Marc Boeuf Frederic Szelag Bertrand Vivien Laurent Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
description	Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.
format	article
author	Benedikovic Daniel Virot Leopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Dado Milan Cassan Eric Marris-Morini Delphine Fedeli Jean-Marc Boeuf Frederic Szelag Bertrand Vivien Laurent
author_facet	Benedikovic Daniel Virot Leopold Aubin Guy Hartmann Jean-Michel Amar Farah Le Roux Xavier Alonso-Ramos Carlos Dado Milan Cassan Eric Marris-Morini Delphine Fedeli Jean-Marc Boeuf Frederic Szelag Bertrand Vivien Laurent
author_sort	Benedikovic Daniel
title	Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
title_short	Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
title_full	Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
title_fullStr	Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
title_full_unstemmed	Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
title_sort	heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -invited
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/9f1c0c54bbc74040a9239115cff604e8
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Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

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