X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Abstract Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative...

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Autores principales:	Pavel Procházka, David Mareček, Zuzana Lišková, Jan Čechal, Tomáš Šikola
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a04583c45dcc4ddbad533584f3096b37
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spelling	oai:doaj.org-article:a04583c45dcc4ddbad533584f3096b372021-12-02T12:30:44ZX-ray induced electrostatic graphene doping via defect charging in gate dielectric10.1038/s41598-017-00673-z2045-2322https://doaj.org/article/a04583c45dcc4ddbad533584f3096b372017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00673-zhttps://doaj.org/toc/2045-2322Abstract Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer.Pavel ProcházkaDavid MarečekZuzana LiškováJan ČechalTomáš ŠikolaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Pavel Procházka David Mareček Zuzana Lišková Jan Čechal Tomáš Šikola X-ray induced electrostatic graphene doping via defect charging in gate dielectric
description	Abstract Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer.
format	article
author	Pavel Procházka David Mareček Zuzana Lišková Jan Čechal Tomáš Šikola
author_facet	Pavel Procházka David Mareček Zuzana Lišková Jan Čechal Tomáš Šikola
author_sort	Pavel Procházka
title	X-ray induced electrostatic graphene doping via defect charging in gate dielectric
title_short	X-ray induced electrostatic graphene doping via defect charging in gate dielectric
title_full	X-ray induced electrostatic graphene doping via defect charging in gate dielectric
title_fullStr	X-ray induced electrostatic graphene doping via defect charging in gate dielectric
title_full_unstemmed	X-ray induced electrostatic graphene doping via defect charging in gate dielectric
title_sort	x-ray induced electrostatic graphene doping via defect charging in gate dielectric
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a04583c45dcc4ddbad533584f3096b37
work_keys_str_mv	AT pavelprochazka xrayinducedelectrostaticgraphenedopingviadefectchargingingatedielectric AT davidmarecek xrayinducedelectrostaticgraphenedopingviadefectchargingingatedielectric AT zuzanaliskova xrayinducedelectrostaticgraphenedopingviadefectchargingingatedielectric AT jancechal xrayinducedelectrostaticgraphenedopingviadefectchargingingatedielectric AT tomassikola xrayinducedelectrostaticgraphenedopingviadefectchargingingatedielectric
_version_	1718394352000040960

X-ray induced electrostatic graphene doping via defect charging in gate dielectric

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