The first principle calculation of improving p-type characteristics of B x Al1-x N

Abstract AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the common...

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Autores principales:	Zhengqian Lu, Fang Wang, Yuhuai Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a18f661e2291497a9b38b287611b76cd
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spelling	oai:doaj.org-article:a18f661e2291497a9b38b287611b76cd2021-12-02T16:04:14ZThe first principle calculation of improving p-type characteristics of B x Al1-x N10.1038/s41598-021-92260-62045-2322https://doaj.org/article/a18f661e2291497a9b38b287611b76cd2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-92260-6https://doaj.org/toc/2045-2322Abstract AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used way of Mg directly as AlN dopant is abandoned, the inhibition effect of the B component on self-compensation of AlN crystal was studied. The improvement of self-compensation performance of AlN crystal by B component is studied by first principles calculation. The results show that the addition of B component can increase the hole concentration of AlN, which is conducive to the formation of p-type AlN.Zhengqian LuFang WangYuhuai LiuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Zhengqian Lu Fang Wang Yuhuai Liu The first principle calculation of improving p-type characteristics of B x Al1-x N
description	Abstract AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the commonly used way of Mg directly as AlN dopant is abandoned, the inhibition effect of the B component on self-compensation of AlN crystal was studied. The improvement of self-compensation performance of AlN crystal by B component is studied by first principles calculation. The results show that the addition of B component can increase the hole concentration of AlN, which is conducive to the formation of p-type AlN.
format	article
author	Zhengqian Lu Fang Wang Yuhuai Liu
author_facet	Zhengqian Lu Fang Wang Yuhuai Liu
author_sort	Zhengqian Lu
title	The first principle calculation of improving p-type characteristics of B x Al1-x N
title_short	The first principle calculation of improving p-type characteristics of B x Al1-x N
title_full	The first principle calculation of improving p-type characteristics of B x Al1-x N
title_fullStr	The first principle calculation of improving p-type characteristics of B x Al1-x N
title_full_unstemmed	The first principle calculation of improving p-type characteristics of B x Al1-x N
title_sort	first principle calculation of improving p-type characteristics of b x al1-x n
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/a18f661e2291497a9b38b287611b76cd
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The first principle calculation of improving p-type characteristics of B x Al1-x N

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