The first principle calculation of improving p-type characteristics of B x Al1-x N

Abstract AlN is one of the third-generation semiconductor materials with wide application prospects due to its 6.2 eV band gap. In the application of semiconductor deep ultraviolet lasers, progress is slow due to the difficulty in obtaining p-type AlN with good performance. In this paper, the common...

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Autores principales: Zhengqian Lu, Fang Wang, Yuhuai Liu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/a18f661e2291497a9b38b287611b76cd
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