Suppression for an intermediate phase in ZnSb films by NiO-doping

Abstract The structural evolution and phase-change kinetics of NiO-doped ZnSb films are investigated. NiO-doped ZnSb films exhibit a single-step crystallization process, which is different from that of undoped ZnSb. NiO-doped ZnSb can directly crystallize into a stable ZnSb phase at temperatures gre...

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Autores principales:	Chao Li, Guoxiang Wang, Dongfeng Qi, Daotian Shi, Xianghua Zhang, Hui Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a1a629225f324cae96506ee28f0aa728
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spelling	oai:doaj.org-article:a1a629225f324cae96506ee28f0aa7282021-12-02T12:32:25ZSuppression for an intermediate phase in ZnSb films by NiO-doping10.1038/s41598-017-09338-32045-2322https://doaj.org/article/a1a629225f324cae96506ee28f0aa7282017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-09338-3https://doaj.org/toc/2045-2322Abstract The structural evolution and phase-change kinetics of NiO-doped ZnSb films are investigated. NiO-doped ZnSb films exhibit a single-step crystallization process, which is different from that of undoped ZnSb. NiO-doped ZnSb can directly crystallize into a stable ZnSb phase at temperatures greater than 320 °C with suppression of a metastable ZnSb phase. These characteristics enlarge the amorphous/crystalline resistance ratio by approximately five orders of magnitude. Moreover, NiO doping of ZnSb films increases crystallization temperature from 260 to 275 °C, improves data retention temperature from 201.7 to 217.3 °C and increases crystalline activation energy from 5.64 to 6.34 eV. The improvement of the thermal parameters in the nanocomposite can be attributed to stable ZnSb grain growth refinement owing to the dispersion of NiO particles in the sample matrix. This provides additional nucleation sites and produces more ZnSb/NiO interfaces, which can initiate the nucleation and accelerate crystallization. The kinetic exponent n decreases from 1.12 to 0.44, which confirms the ultrafast one-dimensional growth and heterogeneous phase transition of the NiO-doped ZnSb films. The improved thermal stability, larger resistance ratio and direct transition to a stable phase with ultrafast one-dimensional crystal growth indicate the good potential of these materials in phase-change memory applications.Chao LiGuoxiang WangDongfeng QiDaotian ShiXianghua ZhangHui WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chao Li Guoxiang Wang Dongfeng Qi Daotian Shi Xianghua Zhang Hui Wang Suppression for an intermediate phase in ZnSb films by NiO-doping
description	Abstract The structural evolution and phase-change kinetics of NiO-doped ZnSb films are investigated. NiO-doped ZnSb films exhibit a single-step crystallization process, which is different from that of undoped ZnSb. NiO-doped ZnSb can directly crystallize into a stable ZnSb phase at temperatures greater than 320 °C with suppression of a metastable ZnSb phase. These characteristics enlarge the amorphous/crystalline resistance ratio by approximately five orders of magnitude. Moreover, NiO doping of ZnSb films increases crystallization temperature from 260 to 275 °C, improves data retention temperature from 201.7 to 217.3 °C and increases crystalline activation energy from 5.64 to 6.34 eV. The improvement of the thermal parameters in the nanocomposite can be attributed to stable ZnSb grain growth refinement owing to the dispersion of NiO particles in the sample matrix. This provides additional nucleation sites and produces more ZnSb/NiO interfaces, which can initiate the nucleation and accelerate crystallization. The kinetic exponent n decreases from 1.12 to 0.44, which confirms the ultrafast one-dimensional growth and heterogeneous phase transition of the NiO-doped ZnSb films. The improved thermal stability, larger resistance ratio and direct transition to a stable phase with ultrafast one-dimensional crystal growth indicate the good potential of these materials in phase-change memory applications.
format	article
author	Chao Li Guoxiang Wang Dongfeng Qi Daotian Shi Xianghua Zhang Hui Wang
author_facet	Chao Li Guoxiang Wang Dongfeng Qi Daotian Shi Xianghua Zhang Hui Wang
author_sort	Chao Li
title	Suppression for an intermediate phase in ZnSb films by NiO-doping
title_short	Suppression for an intermediate phase in ZnSb films by NiO-doping
title_full	Suppression for an intermediate phase in ZnSb films by NiO-doping
title_fullStr	Suppression for an intermediate phase in ZnSb films by NiO-doping
title_full_unstemmed	Suppression for an intermediate phase in ZnSb films by NiO-doping
title_sort	suppression for an intermediate phase in znsb films by nio-doping
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a1a629225f324cae96506ee28f0aa728
work_keys_str_mv	AT chaoli suppressionforanintermediatephaseinznsbfilmsbyniodoping AT guoxiangwang suppressionforanintermediatephaseinznsbfilmsbyniodoping AT dongfengqi suppressionforanintermediatephaseinznsbfilmsbyniodoping AT daotianshi suppressionforanintermediatephaseinznsbfilmsbyniodoping AT xianghuazhang suppressionforanintermediatephaseinznsbfilmsbyniodoping AT huiwang suppressionforanintermediatephaseinznsbfilmsbyniodoping
_version_	1718394110934515712

Suppression for an intermediate phase in ZnSb films by NiO-doping

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